Publication:

Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs

Date

 
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-15T05:42:16Z
dc.date.available2021-10-15T05:42:16Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7891
dc.source.beginpage1675
dc.source.endpage1682
dc.source.issue7
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume50
dc.title

Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: