Publication:

Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM

Date

2013
Proceedings Paper
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dc.contributor.authorChen, Yangyin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorClima, Sergiu
dc.contributor.authorGoux, Ludovic
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-21T06:56:45Z
dc.date.available2021-10-21T06:56:45Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22132
dc.identifier.urlhttp://ecst.ecsdl.org/content/50/34/3.abstract
dc.source.beginpage3
dc.source.conferenceNonvolatile Memories
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage9
dc.title

Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM

dc.typeProceedings paper
dspace.entity.typePublication
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