Publication:
Properties of p-n diodes made in polysilicon layers with intermediate grain size
Date
| dc.contributor.author | Beaucarne, Guy | |
| dc.contributor.author | Poortmans, Jef | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.author | Nijs, Johan | |
| dc.contributor.author | Mertens, Robert | |
| dc.contributor.imecauthor | Poortmans, Jef | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.contributor.imecauthor | Mertens, Robert | |
| dc.contributor.orcidimec | Poortmans, Jef::0000-0003-2077-2545 | |
| dc.date.accessioned | 2021-10-06T10:42:00Z | |
| dc.date.available | 2021-10-06T10:42:00Z | |
| dc.date.issued | 1999 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/3218 | |
| dc.source.beginpage | 577 | |
| dc.source.endpage | 582 | |
| dc.source.journal | Diffusion and Defect Data. Part B: Solid State Phenomena | |
| dc.source.volume | 67-68 | |
| dc.title | Properties of p-n diodes made in polysilicon layers with intermediate grain size | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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