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New insights in the impact of the breakdown mechanisms on the statistics of intrinsic and extrinsic breakdown in thin oxides

Date

1996
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dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorOgier, Jean-Luc
dc.contributor.authorBellens, Rudi
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDepas, Michel
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.date.accessioned2021-09-29T14:31:32Z
dc.date.available2021-09-29T14:31:32Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1241
dc.source.conference27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.
dc.source.conferencelocation
dc.title

New insights in the impact of the breakdown mechanisms on the statistics of intrinsic and extrinsic breakdown in thin oxides

dc.typeOral presentation
dspace.entity.typePublication
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