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Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Publication:
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Date
2018
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Stoffels, Steve
;
Geens, Karen
;
Li, Xiangdong
;
Wellekens, Dirk
;
You, Shuzhen
;
Zhao, Ming
;
Borga, Matteo
;
Zanoni, Enrico
;
Meneghesso, Gaudenzio
;
Meneghini, Matteo
;
Posthuma, Niels
;
Van Hove, Marleen
;
Decoutere, Stefaan
Journal
MRS Communications
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2031
since deposited on 2021-10-26
Acq. date: 2025-10-23
Citations
Metrics
Views
2031
since deposited on 2021-10-26
Acq. date: 2025-10-23
Citations