Publication:

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Date

2017
Proceedings Paper
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dc.contributor.authorStoffels, Steve
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorTallarico, A.N.
dc.contributor.authorFiegna, C.
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-24T14:17:27Z
dc.date.available2021-10-24T14:17:27Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29508
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7936310/
dc.source.beginpage4B-4
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.title

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

dc.typeProceedings paper
dspace.entity.typePublication
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