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Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210C

Date

2010
Meeting abstract
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dc.contributor.authorEl Rifai, Joumana
dc.contributor.authorSedky, Sherif
dc.contributor.authorAbdel Aziz, Ahmed
dc.contributor.authorPuers, Bob
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorWitvrouw, Ann
dc.contributor.imecauthorPuers, Bob
dc.contributor.imecauthorVan Hoof, Chris
dc.date.accessioned2021-10-18T16:11:16Z
dc.date.available2021-10-18T16:11:16Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17061
dc.source.beginpageS2.5
dc.source.conferenceMRS Fall Meeting Symposium S: Micromechanical Systems - Materials and Devices IV
dc.source.conferencedate29/11/2010
dc.source.conferencelocationBoston, MA USA
dc.title

Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210C

dc.typeMeeting abstract
dspace.entity.typePublication
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