Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts

dc.contributor.author	Van Roy, Wim
dc.contributor.author	Roelfsema, R. F. B.
dc.contributor.author	Liu, Zhiyu
dc.contributor.author	Akinaga, Hiroyuki
dc.contributor.author	Miyanishi, S.
dc.contributor.author	Manago, T.
dc.contributor.author	Borghs, Gustaaf
dc.contributor.author	De Boeck, Jo
dc.contributor.imecauthor	Van Roy, Wim
dc.contributor.imecauthor	Borghs, Gustaaf
dc.contributor.imecauthor	De Boeck, Jo
dc.contributor.orcidimec	Van Roy, Wim::0000-0003-3232-1987
dc.date.accessioned	2021-10-14T14:04:03Z
dc.date.available	2021-10-14T14:04:03Z
dc.date.issued	2000
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/4853
dc.source.conference	11th International Conference on Molecular Beam Epitaxy - MBE-XI; 10-15 September 2000; Beijing, China.
dc.source.conferencelocation
dc.title	Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts
dc.type	Oral presentation
dspace.entity.type	Publication
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