On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric

dc.contributor.author	Lukyanchikova, N.
dc.contributor.author	Garbar, N.
dc.contributor.author	Kudina, V.
dc.contributor.author	Smolanka, A.
dc.contributor.author	Put, Sofie
dc.contributor.author	Claeys, Cor
dc.contributor.author	Simoen, Eddy
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-18T00:18:57Z
dc.date.available	2021-10-18T00:18:57Z
dc.date.embargo	9999-12-31
dc.date.issued	2009
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/15770
dc.source.beginpage	32101
dc.source.issue	3
dc.source.journal	Applied Physics Letters
dc.source.volume	95
dc.title	On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
dc.type	Journal article
dspace.entity.type	Publication
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