Publication:

Field-free switching of perpendicular magnetization at room temperature using out-of-plane spins from TaIrTe4

 
dc.contributor.authorLiu, Yakun
dc.contributor.authorShi, Guoyi
dc.contributor.authorKumar, Dushyant
dc.contributor.authorKim, Taeheon
dc.contributor.authorShi, Shuyuan
dc.contributor.authorYang, Dongsheng
dc.contributor.authorZhang, Jiantian
dc.contributor.authorZhang, Chenhui
dc.contributor.authorWang, Fei
dc.contributor.authorYang, Shuhan
dc.contributor.authorPu, Yuchen
dc.contributor.authorYu, Peng
dc.contributor.authorCai, Kaiming
dc.contributor.authorYang, Hyunsoo
dc.contributor.imecauthorCai, Kaiming
dc.contributor.orcidimecCai, Kaiming::0000-0002-1160-864X
dc.date.accessioned2023-12-14T08:48:04Z
dc.date.available2023-10-29T17:18:32Z
dc.date.available2023-12-14T08:48:04Z
dc.date.issued2023
dc.description.wosFundingTextThis work was supported by SpOT-LITE program (A*STAR grant, A18A6b0057) through RIE2020 funds; Samsung Electronics (IO221024-03172-01); National Natural Science Foundation of China (nos. 22175203 and 22006023); Natural Science Foundation of Guangdong Province (nos. 2022B1515020065 and 2019A1515010428); and Plan Fostering Project of the State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University (no. OEMT-2021-PZ-02). We would like to acknowledge that the simulation work involved in this research is partially supported by NUS Information Technology's High Performance Computing.
dc.identifier.doi10.1038/s41928-023-01039-2
dc.identifier.issn2520-1131
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43016
dc.publisherNATURE PORTFOLIO
dc.source.beginpage732
dc.source.endpage738
dc.source.issue10
dc.source.journalNATURE ELECTRONICS
dc.source.numberofpages7
dc.source.volume6
dc.subject.keywordsORBIT TORQUE
dc.title

Field-free switching of perpendicular magnetization at room temperature using out-of-plane spins from TaIrTe4

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: