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GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

Date

2011
Journal article
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dc.contributor.authorMerckling, Clement
dc.contributor.authorSun, Xiao
dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorDekoster, Johan
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorSun, Xiao
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDekoster, Johan
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.accessioned2021-10-19T16:17:33Z
dc.date.available2021-10-19T16:17:33Z
dc.date.issued2011
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19421
dc.source.beginpage73719
dc.source.issue7
dc.source.journalJournal of Applied Physics
dc.source.volume109
dc.title

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

dc.typeJournal article
dspace.entity.typePublication
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