Origin of the apparent delocalization of the conduction band in high mobility amorphous semiconductors

dc.contributor.author	de Jamblinne de Meux, Albert
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.author	Genoe, Jan
dc.contributor.author	Heremans, Paul
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.imecauthor	Genoe, Jan
dc.contributor.imecauthor	Heremans, Paul
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimec	Genoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimec	Heremans, Paul::0000-0003-2151-1718
dc.date.accessioned	2021-10-24T03:49:23Z
dc.date.available	2021-10-24T03:49:23Z
dc.date.issued	2017
dc.identifier.issn	0953-8984
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/28129
dc.identifier.url	http://iopscience.iop.org/article/10.1088/1361-648X/aa608c
dc.source.beginpage	255702
dc.source.issue	25
dc.source.journal	Journal of Physics: Condensed Matter
dc.source.volume	29
dc.title	Origin of the apparent delocalization of the conduction band in high mobility amorphous semiconductors
dc.type	Journal article
dspace.entity.type	Publication
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