Publication:

Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors

Date

2022-09
Journal article
https://doi.org/10.1016/j.sse.2022.108406
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dc.contributor.authorChien, Yu-Chieh
dc.contributor.authorNag, Manoj
dc.contributor.authorGenoe, Jan
dc.contributor.authorRolin, Cedric
dc.contributor.imecauthorChien, Yu-Chieh
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorRolin, Cedric
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecRolin, Cedric::0000-0001-5542-8504
dc.date.accessioned2022-08-29T07:42:01Z
dc.date.available2022-07-28T02:30:39Z
dc.date.available2022-07-29T09:32:31Z
dc.date.available2022-08-29T07:42:01Z
dc.date.embargo9999-12-31
dc.date.issued2022-09
dc.identifier.doi10.1016/j.sse.2022.108406
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40178
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108406
dc.source.issueSeptember
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages6
dc.source.volume195
dc.title

Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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