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Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n+-p-well diodes

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dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T17:37:43Z
dc.date.available2021-10-14T17:37:43Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5586
dc.source.beginpage2445
dc.source.endpage2446
dc.source.issue10
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume48
dc.title

Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n+-p-well diodes

dc.typeJournal article
dspace.entity.typePublication
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