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n+ doping of Ge by P or As implantation and flash-lamp annealing

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dc.contributor.authorWündisch, C.
dc.contributor.authorPosselt, M.
dc.contributor.authorAnwand, W.
dc.contributor.authorSchmidt, B.
dc.contributor.authorGrötzschel, R.
dc.contributor.authorMücklich, A.
dc.contributor.authorSkorupa, W.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClarysse, Trudo
dc.contributor.authorSatta, Alessandra
dc.contributor.authorHortenbach, H.
dc.contributor.authorMöller, A.
dc.contributor.authorPelzing, P.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T12:52:27Z
dc.date.available2021-10-17T12:52:27Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14799
dc.source.conferenceE-MRS Spring Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices
dc.source.conferencedate26/05/2008
dc.source.conferencelocationStrasbourg France
dc.title

n+ doping of Ge by P or As implantation and flash-lamp annealing

dc.typeMeeting abstract
dspace.entity.typePublication
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