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Length dependent transition of the dominant 1/f noise mechanism in Si-passivated Ge-on-Si pMOSFETs
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Length dependent transition of the dominant 1/f noise mechanism in Si-passivated Ge-on-Si pMOSFETs
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Date
2009
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Firrincieli, Andrea
;
Leys, Frederik
;
Loo, Roger
;
De Jaeger, Brice
;
Mitard, Jerome
;
Claeys, Cor
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1811
since deposited on 2021-10-18
Acq. date: 2026-01-06
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Views
1811
since deposited on 2021-10-18
Acq. date: 2026-01-06
Citations