Publication:

Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency Transistors

Date

2024
Journal article
https://doi.org/10.1002/pssa.202400069
Simple item page Full metadata Statistics
 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-0856-851X
cris.virtual.orcid0000-0002-2831-0719
cris.virtual.orcid0000-0003-0769-7069
cris.virtual.orcid0009-0004-6290-5259
cris.virtual.orcid0000-0001-9166-4408
cris.virtual.orcid0000-0003-0878-3276
cris.virtual.orcid0000-0003-3463-416X
cris.virtual.orcid0000-0002-4124-7881
cris.virtual.orcid0000-0002-1132-3468
cris.virtual.orcid0000-0002-8062-3165
cris.virtualsource.departmente46ce0f2-7a88-467e-bab3-edbb3c5b7e2b
cris.virtualsource.department8ec92196-e614-4f8c-b405-11eed8c41ef7
cris.virtualsource.department78f3a04c-1a79-488d-b3c6-436cafb31dd0
cris.virtualsource.department0a5ce67f-6029-4849-94ac-205ae75c2190
cris.virtualsource.department37e9b359-0d14-4379-bfa0-e5593f0acf46
cris.virtualsource.department6980a92b-0bb9-42a3-9ec2-b51baafdb104
cris.virtualsource.departmentfa867be9-6d43-441a-8209-5ffdc9d82a84
cris.virtualsource.department3b8b3108-be7e-4fbe-984f-9ba9fc9dedc5
cris.virtualsource.departmentfbcffc0b-2965-4cdd-bdfd-fd103b431f7b
cris.virtualsource.departmentc807a03a-358d-4274-b622-dee889a60454
cris.virtualsource.orcide46ce0f2-7a88-467e-bab3-edbb3c5b7e2b
cris.virtualsource.orcid8ec92196-e614-4f8c-b405-11eed8c41ef7
cris.virtualsource.orcid78f3a04c-1a79-488d-b3c6-436cafb31dd0
cris.virtualsource.orcid0a5ce67f-6029-4849-94ac-205ae75c2190
cris.virtualsource.orcid37e9b359-0d14-4379-bfa0-e5593f0acf46
cris.virtualsource.orcid6980a92b-0bb9-42a3-9ec2-b51baafdb104
cris.virtualsource.orcidfa867be9-6d43-441a-8209-5ffdc9d82a84
cris.virtualsource.orcid3b8b3108-be7e-4fbe-984f-9ba9fc9dedc5
cris.virtualsource.orcidfbcffc0b-2965-4cdd-bdfd-fd103b431f7b
cris.virtualsource.orcidc807a03a-358d-4274-b622-dee889a60454
dc.contributor.authorBanerjee, Sourish
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorAlian, AliReza
dc.contributor.authorZhao, Ming
dc.contributor.authorHahn, Herwig
dc.contributor.authorMinj, Albert
dc.contributor.authorVanhove, Benjamin
dc.contributor.authorVohra, Anurag
dc.contributor.authorParvais, Bertrand
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorBanerjee, Sourish
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorVanhove, Benjamin
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecBanerjee, Sourish::0000-0002-4124-7881
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecVanhove, Benjamin::0009-0004-6290-5259
dc.date.accessioned2025-04-24T09:52:28Z
dc.date.available2024-06-09T17:41:16Z
dc.date.available2025-04-24T09:52:28Z
dc.date.issued2024
dc.identifier.doi10.1002/pssa.202400069
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44009
dc.publisherWILEY-V C H VERLAG GMBH
dc.source.beginpageArt. 2400069
dc.source.endpageN/A
dc.source.issue21
dc.source.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.source.numberofpages12
dc.source.volume221
dc.subject.keywordsELECTRON-TRANSPORT PROPERTIES
dc.subject.keywordsPIT FORMATION
dc.subject.keywordsOHMIC CONTACTS
dc.subject.keywordsINGAN
dc.subject.keywordsGAN
dc.subject.keywordsSI
dc.subject.keywordsFILMS
dc.subject.keywordsMOBILITY
dc.subject.keywordsDEFECTS
dc.subject.keywordsEPITAXY
dc.title

Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency Transistors

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles