Publication:

Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency Transistors

Date

2024
Journal article
https://doi.org/10.1002/pssa.202400069
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dc.contributor.authorBanerjee, Sourish
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorAlian, Alireza
dc.contributor.authorZhao, Ming
dc.contributor.authorHahn, Herwig
dc.contributor.authorMinj, Albert
dc.contributor.authorVanhove, Benjamin
dc.contributor.authorVohra, Anurag
dc.contributor.authorParvais, Bertrand
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorBanerjee, Sourish
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorVanhove, Benjamin
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecBanerjee, Sourish::0000-0002-4124-7881
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecVanhove, Benjamin::0009-0004-6290-5259
dc.date.accessioned2025-04-24T09:52:28Z
dc.date.available2024-06-09T17:41:16Z
dc.date.available2025-04-24T09:52:28Z
dc.date.issued2024
dc.identifier.doi10.1002/pssa.202400069
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44009
dc.publisherWILEY-V C H VERLAG GMBH
dc.source.beginpageArt. 2400069
dc.source.endpageN/A
dc.source.issue21
dc.source.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.source.numberofpages12
dc.source.volume221
dc.subject.keywordsELECTRON-TRANSPORT PROPERTIES
dc.subject.keywordsPIT FORMATION
dc.subject.keywordsOHMIC CONTACTS
dc.subject.keywordsINGAN
dc.subject.keywordsGAN
dc.subject.keywordsSI
dc.subject.keywordsFILMS
dc.subject.keywordsMOBILITY
dc.subject.keywordsDEFECTS
dc.subject.keywordsEPITAXY
dc.title

Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency Transistors

dc.typeJournal article
dspace.entity.typePublication
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