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Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectrics
Publication:
Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectrics
Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Houssa, Michel
;
Bizzari, C.
;
Autran, J.L.
Journal
Abstract
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1886
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1886
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations