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Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
Publication:
Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
Date
2013
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Baert, Bruno
;
Gupta, Somya
;
Schmeits, Marcel
;
Simoen, Eddy
;
Nguyen, Ngoc Duy
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1917
since deposited on 2021-10-21
Acq. date: 2025-10-24
Citations
Metrics
Views
1917
since deposited on 2021-10-21
Acq. date: 2025-10-24
Citations