Publication:

Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

Date

2017
Proceedings Paper
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dc.contributor.authorYakimets, Dmitry
dc.contributor.authorGarcia Bardon, Marie
dc.contributor.authorJang, Doyoung
dc.contributor.authorSchuddinck, Pieter
dc.contributor.authorSherazi, Yasser
dc.contributor.authorWeckx, Pieter
dc.contributor.authorMiyaguchi, Kenichi
dc.contributor.authorParvais, Bertrand
dc.contributor.authorRaghavan, Praveen
dc.contributor.authorSpessot, Alessio
dc.contributor.authorVerkest, Diederik
dc.contributor.authorMocuta, Anda
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorGarcia Bardon, Marie
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorSchuddinck, Pieter
dc.contributor.imecauthorSherazi, Yasser
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorMiyaguchi, Kenichi
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorVerkest, Diederik
dc.contributor.orcidimecMiyaguchi, Kenichi::0000-0002-7073-6457
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecVerkest, Diederik::0000-0001-6567-2746
dc.date.accessioned2021-10-24T19:32:32Z
dc.date.available2021-10-24T19:32:32Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29983
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8268429
dc.source.beginpage501
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2017
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage504
dc.title

Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

dc.typeProceedings paper
dspace.entity.typePublication
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