Tensile-strained GeSn metal-oxide-semiconductor field-effect  transistor devices on Si(111) using solid phase epitaxy

Author(s)

;

Maeda, Tatsuro

;

Jevasuwan, Wipakorn

;

Hattori, Hiroyuki

;

Uchida, Noriyuki

;

Miura, Shu

;

Tanaka, Masatoshi

;

Locquet, Jean-Pierre

Applied Physics Express

1969 since deposited on 2021-10-21

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Acq. date: 2025-10-24