Publication:

Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop

Date

2013
Proceedings Paper
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dc.contributor.authorMarcon, Denis
dc.contributor.authorViaene, John
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorKang, Xuanwu
dc.contributor.authorLenci, Silvia
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-21T09:47:45Z
dc.date.available2021-10-21T09:47:45Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22761
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6599162&queryText%3DReliability+of+AlGaN%2FGaN+HEMTs%3A+permanent
dc.source.beginpage249
dc.source.conference20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate15/07/2013
dc.source.conferencelocationSuzhou China
dc.source.endpage254
dc.title

Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop

dc.typeProceedings paper
dspace.entity.typePublication
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