Publication:

Intrinsic robustness of TFET subthreshold swing to interface and oxide traps: a comparative PBTI study of InGaAs TFETs and MOSFETs

Date

2016
Journal article
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorAlian, AliReza
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorLinten, Dimitri
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T10:51:43Z
dc.date.available2021-10-23T10:51:43Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26628
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7502178
dc.source.beginpage1055
dc.source.endpage1058
dc.source.issue8
dc.source.journalIEEE Electron Device Letters
dc.source.volume37
dc.title

Intrinsic robustness of TFET subthreshold swing to interface and oxide traps: a comparative PBTI study of InGaAs TFETs and MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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