Publication:

2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer

Date

2012
Proceedings Paper
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dc.contributor.authorSrivastava, Puneet
dc.contributor.authorCheng, Kai
dc.contributor.authorDas, Jo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLeys, Maarten
dc.contributor.authorMarcon, Denis
dc.contributor.authorVisalli, Domenica
dc.contributor.authorGeens, Karen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-20T16:24:40Z
dc.date.available2021-10-20T16:24:40Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21545
dc.source.conferenceInternational Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH
dc.source.conferencedate23/04/2012
dc.source.conferencelocationBoston, MA USA
dc.title

2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer

dc.typeProceedings paper
dspace.entity.typePublication
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