Publication:

Performance comparison of N-Type Si nanowires, nanosheets and FinFETs by MC device simulation

Date

2018-11
Journal article
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dc.contributor.authorBufler, Fabian
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorMertens, Hans
dc.contributor.authorEneman, Geert
dc.contributor.authorMocuta, Anda
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorBufler, Fabian
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecBufler, Fabian::0000-0002-1558-9378
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-25T16:57:37Z
dc.date.available2021-10-25T16:57:37Z
dc.date.issued2018-11
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30332
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8453810
dc.source.beginpage1628
dc.source.endpage1631
dc.source.issue11
dc.source.journalIEEE Electron Device Letters
dc.source.volume39
dc.title

Performance comparison of N-Type Si nanowires, nanosheets and FinFETs by MC device simulation

dc.typeJournal article
dspace.entity.typePublication
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