Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

dc.contributor.author	Tang, Baojun
dc.contributor.author	Toledano Luque, Maria
dc.contributor.author	Zhang, W.D.
dc.contributor.author	Van den Bosch, Geert
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Zhang, J.F.
dc.contributor.author	Van Houdt, Jan
dc.contributor.imecauthor	Van den Bosch, Geert
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Van Houdt, Jan
dc.contributor.orcidimec	Van den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimec	Van Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned	2021-10-21T12:36:24Z
dc.date.available	2021-10-21T12:36:24Z
dc.date.issued	2013
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/23153
dc.source.beginpage	39
dc.source.endpage	42
dc.source.journal	Microelectronic Engineering
dc.source.volume	109
dc.title	Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
dc.type	Journal article
dspace.entity.type	Publication
Files
Publication available in collections:	Articles