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Simulation of the anneal of ion implanted boron emitter and the impact on the saturation current density

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dc.contributor.authorFlorakis, Antonios
dc.contributor.authorJanssens, Tom
dc.contributor.authorRosseel, Erik
dc.contributor.authorDouhard, Bastien
dc.contributor.authorDelmotte, Joris
dc.contributor.authorCornagliotti, Emanuele
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorCornagliotti, Emanuele
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-20T11:02:03Z
dc.date.available2021-10-20T11:02:03Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20684
dc.source.beginpage240
dc.source.conference2nd International Conference on Crystalline Silicon Photovoltaics - Silicon PV
dc.source.conferencedate3/05/2012
dc.source.conferencelocationLeuven Belgium
dc.source.endpage246
dc.title

Simulation of the anneal of ion implanted boron emitter and the impact on the saturation current density

dc.typeProceedings paper
dspace.entity.typePublication
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