Publication:

Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs

Date

2016
Journal article
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dc.contributor.authorDuan, Guo Xing
dc.contributor.authorHachtel, Jordan
dc.contributor.authorZhang, En Xia
dc.contributor.authorZhang, Cher Xuan
dc.contributor.authorFleetwood, Daniel
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorReed, Robert
dc.contributor.authorMitard, Jerome
dc.contributor.authorLinten, Dimitri
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorChisholm, Matthew
dc.contributor.authorPantelides, Sokrates
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T10:41:16Z
dc.date.available2021-10-23T10:41:16Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26581
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7572180/
dc.source.beginpage541
dc.source.endpage548
dc.source.issue4
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume16
dc.title

Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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