Publication:

Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric

Date

2021
Proceedings Paper
https://doi.org/10.1109/IIRW53245.2021.9635612
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dc.contributor.authorHiblot, Gaspard
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.imecauthorHiblot, Gaspard
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.orcidimecHiblot, Gaspard::0000-0002-3869-965X
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.date.accessioned2022-03-31T12:09:03Z
dc.date.available2022-03-25T02:07:41Z
dc.date.available2022-03-30T08:07:55Z
dc.date.available2022-03-31T12:09:03Z
dc.date.issued2021
dc.identifier.doi10.1109/IIRW53245.2021.9635612
dc.identifier.eisbn978-1-6654-1794-5
dc.identifier.issn1930-8841
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39513
dc.publisherIEEE
dc.source.beginpage57
dc.source.conferenceIEEE International Integrated Reliability Workshop (IIRW) / 4th Reliability Experts Forum
dc.source.conferencedateOCT 04-29, 2021
dc.source.conferencelocationOnline
dc.source.endpage60
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsDAMAGE
dc.subject.keywordscharging damage high K reliability
dc.title

Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric

dc.typeProceedings paper
dspace.entity.typePublication
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