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Modeling of doping profile in active-silicon region of silicon-on-insulator transistor as a function of channel length

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dc.contributor.authorMody, Jay
dc.contributor.authorGhosh, Prasanta
dc.date.accessioned2021-10-16T03:28:51Z
dc.date.available2021-10-16T03:28:51Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10895
dc.source.conferenceDigest International Semiconductor Device Research Symposium
dc.source.conferencedate7/12/2005
dc.source.conferencelocationWashington D.C. USA
dc.title

Modeling of doping profile in active-silicon region of silicon-on-insulator transistor as a function of channel length

dc.typeProceedings paper
dspace.entity.typePublication
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