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Short-circuit current densities exceeding 30 mA/cm² by use of chirped porous-silicon reflectors and shallow emitters in thin-film (20 μm) epitaxial silicon solar cells

Date

2009
Journal article
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dc.contributor.authorKuzma Filipek, Izabela
dc.contributor.authorVan Nieuwenhuysen, Kris
dc.contributor.authorVan Hoeymissen, Jan
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.contributor.imecauthorKuzma Filipek, Izabela
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-17T23:39:57Z
dc.date.available2021-10-17T23:39:57Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15638
dc.source.beginpage499
dc.source.endpage501
dc.source.issue5
dc.source.journalIEEE Electron Device Letters
dc.source.volume30
dc.title

Short-circuit current densities exceeding 30 mA/cm² by use of chirped porous-silicon reflectors and shallow emitters in thin-film (20 μm) epitaxial silicon solar cells

dc.typeJournal article
dspace.entity.typePublication
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