Comparative experimental analysis of time-dependent variability using a transistor test array

Abstract

As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent variability, the latter including Random Telegraph Noise (RTN) and Bias Temperature Instability (BTI), become a great concern for IC design. Accurate statistical models describing these two variability sources are therefore necessary in order to design reliable circuits and systems. This paper gives insights in the geometric scaling of these variabilities and analyzes time-dependent variability through three different measurement techniques: 2-point Measure-Stress-Measure, Time-Dependent Defect Spectroscopy, and fine-step Id-Vg. Advantages and downsides of each technique are discussed and compared.