Publication:

High yield and process uniformity for 300 mm integrated WS2 FETs

Date

2021
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorSchram, Tom
dc.contributor.authorSmets, Quentin
dc.contributor.authorRadisic, Dunja
dc.contributor.authorGroven, Benjamin
dc.contributor.authorThiam, Arame
dc.contributor.authorLi, Waikin
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorVandersmissen, Kevin
dc.contributor.authorMaurice, Thibaut
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorThiam, Arame
dc.contributor.imecauthorLi, Waikin
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorVandersmissen, Kevin
dc.contributor.imecauthorMaurice, Thibaut
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecMaurice, Thibaut::0000-0002-8919-1071
dc.date.accessioned2022-09-22T09:05:48Z
dc.date.available2021-11-19T13:21:51Z
dc.date.available2022-09-22T09:05:48Z
dc.date.embargo2021-06-13
dc.date.issued2021
dc.identifier.issnNA
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38445
dc.source.beginpage1
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate13-19 /6/ 2021
dc.source.conferencelocationKyoto virtual
dc.source.endpage2
dc.source.journalNA
dc.source.numberofpages2
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsWS2
dc.subject.keywordsTMDC
dc.subject.keywords2D
dc.subject.keywordsCVD
dc.subject.keywords300 mm
dc.subject.keywordsFET
dc.subject.keywordsintegration
dc.title

High yield and process uniformity for 300 mm integrated WS2 FETs

dc.typeMeeting abstract
dspace.entity.typePublication
Files

Original bundle

Name:
T3-6_Paper (1).pdf
Size:
885.9 KB
Format:
Unknown data format
Description:
Published version
Download
Publication available in collections:
Conference contributions