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Improved active layers for mid-IR LEDs and lasers using symmetrically-strained InAsSb/InAs/InAlAs/InAs superlattices

Date

1998
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dc.contributor.authorVan Hoof, Chris
dc.contributor.authorNemeth, Stefan
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorNemeth, Stefan
dc.date.accessioned2021-10-01T09:18:05Z
dc.date.available2021-10-01T09:18:05Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3047
dc.source.conferenceMIOMD; 25-28 March 1998; Prague, Czech Republic.
dc.source.conferencelocation
dc.title

Improved active layers for mid-IR LEDs and lasers using symmetrically-strained InAsSb/InAs/InAlAs/InAs superlattices

dc.typeOral presentation
dspace.entity.typePublication
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