Publication:

Si passivation for Ge pMOSFETs: impact of Si cap growth conditions

Date

2011
Journal article
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dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDelmotte, Joris
dc.contributor.authorDouhard, Bastien
dc.contributor.authorValev, Ventislav
dc.contributor.authorVanbel, Maarten
dc.contributor.authorVerbiest, Thierry
dc.contributor.authorRip, Jens
dc.contributor.authorBrijs, Bert
dc.contributor.authorConard, Thierry
dc.contributor.authorClaypool, Chris
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorZaima, Shigeaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.date.accessioned2021-10-19T21:22:12Z
dc.date.available2021-10-19T21:22:12Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20097
dc.source.beginpage116
dc.source.endpage121
dc.source.issue1
dc.source.journalSolid-State Electronics
dc.source.volume60
dc.title

Si passivation for Ge pMOSFETs: impact of Si cap growth conditions

dc.typeJournal article
dspace.entity.typePublication
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