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Analysis of deep submicron bulk and fully depleted SOI nMOSFET analog operation at cryogenic temperatures

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dc.contributor.authorPavanello, M.A.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T03:59:56Z
dc.date.available2021-10-16T03:59:56Z
dc.date.embargo9999-12-31
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11002
dc.source.beginpage289
dc.source.conferenceSilicon-on-Insulator Technology and Devices XII: Proceedings of the International Symposium
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage294
dc.title

Analysis of deep submicron bulk and fully depleted SOI nMOSFET analog operation at cryogenic temperatures

dc.typeProceedings paper
dspace.entity.typePublication
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