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Articles
Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates
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Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates
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Date
2019
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Hsu, Brent
;
Alian, AliReza
;
El Kazzi, Salim
;
Wang, Chong
;
Ori, Hiroyuki
Journal
Semiconductor Science and Technology
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1929
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Acq. date: 2025-12-10
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Views
1929
since deposited on 2021-10-27
3
last month
1
last week
Acq. date: 2025-12-10
Citations