Publication:

Implications of channel hot carrier degradation in Si0.45Ge0.55 pMOSFETs

Date

2010
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorMitard, Jerome
dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCrupi, Felice
dc.contributor.authorGrasser, Tibor
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-18T16:24:28Z
dc.date.available2021-10-18T16:24:28Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17115
dc.source.conference41st IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate2/12/2010
dc.source.conferencelocationSan Diego - CA USA
dc.title

Implications of channel hot carrier degradation in Si0.45Ge0.55 pMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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