A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

dc.contributor.author	Gong, Chun
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Posthuma, Niels
dc.contributor.author	Van Kerschaver, Emmanuel
dc.contributor.author	Poortmans, Jef
dc.contributor.author	Mertens, Robert
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Posthuma, Niels
dc.contributor.imecauthor	Poortmans, Jef
dc.contributor.imecauthor	Mertens, Robert
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Posthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimec	Poortmans, Jef::0000-0003-2077-2545
dc.date.accessioned	2021-10-18T16:35:53Z
dc.date.available	2021-10-18T16:35:53Z
dc.date.issued	2010
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17159
dc.identifier.url	http://link.aip.org/link/?APL/96/103507
dc.source.beginpage	103507
dc.source.issue	10
dc.source.journal	Applied Physics Letters
dc.source.volume	96
dc.title	A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes
dc.type	Journal article
dspace.entity.type	Publication
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