Publication:

Low-current operation of novel Gd2O3-based RRAM cells with large memory window

Date

2016-09
Journal article
https://doi.org/10.1002/pssa.201532377
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dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-23T10:15:53Z
dc.date.available2021-10-23T10:15:53Z
dc.date.embargo9999-12-31
dc.date.issued2016-09
dc.identifier.doi10.1002/pssa.201532377
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26429
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201532377/abstract;jsessionid=D0D0969D060D818B033A32F870B91074.f02t04?userIsAuth
dc.source.beginpage320
dc.source.endpage324
dc.source.issue2
dc.source.journalPhysica Status Solidi A
dc.source.volume213
dc.title

Low-current operation of novel Gd2O3-based RRAM cells with large memory window

dc.typeJournal article
dspace.entity.typePublication
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