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Selective oxidation of SiGe less than 50% versus Si using Low Temperature Steam Anneal at T less than or equal to 650°C
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Selective oxidation of SiGe less than 50% versus Si using Low Temperature Steam Anneal at T less than or equal to 650°C
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Date
2018-05
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wostyn, Kurt
;
Crovato, Nicola
;
Blancher, Ken
;
Van Bortel, Thomas
;
Kimura, Yosuke
;
Mertens, Hans
;
Vaisman Chasin, Adrian
;
Conard, Thierry
;
Douhard, Bastien
;
Meersschaut, Johan
;
Steenbergen, Johnny
;
Rondas, Dirk
;
Van Opstal, Tinneke
;
Hikavyy, Andriy
;
Milenin, Alexey
;
Loo, Roger
;
Holsteyns, Frank
;
Horiguchi, Naoto
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1921
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Metrics
Views
1921
since deposited on 2021-10-26
9
last month
1
last week
Acq. date: 2025-12-15
Citations