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Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects

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dc.contributor.authorHatta, S. W. M.
dc.contributor.authorJi, J.
dc.contributor.authorZhang, J. F.
dc.contributor.authorDuan, M.
dc.contributor.authorZhang, W. D.
dc.contributor.authorSoin, N.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-21T08:09:41Z
dc.date.available2021-10-21T08:09:41Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22464
dc.source.beginpage1745
dc.source.endpage1753
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume60
dc.title

Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects

dc.typeJournal article
dspace.entity.typePublication
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