Publication:

Impact of gate oxide nitridation process on 1/f noise in 0.18 micron CMOS

Date

2001
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorDa Rold, Martina
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMertens, S.
dc.contributor.authorSchaekers, Marc
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-14T16:44:29Z
dc.date.available2021-10-14T16:44:29Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5177
dc.source.beginpage1933
dc.source.endpage1938
dc.source.issue12
dc.source.journalMicroelectronics Reliability
dc.source.volume41/42
dc.title

Impact of gate oxide nitridation process on 1/f noise in 0.18 micron CMOS

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles