Publication:

n-Channel bulk and DTMOS FinFETs: investigation of GIDL and gate leakage currents

Date

2016
Proceedings Paper
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dc.contributor.authorMagan, Caio M.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorde Andrade, Maria Gloria C.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-23T12:23:41Z
dc.date.available2021-10-23T12:23:41Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26938
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7731350/
dc.source.conference31st Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate29/08/2016
dc.source.conferencelocationBrasilia Brazil
dc.title

n-Channel bulk and DTMOS FinFETs: investigation of GIDL and gate leakage currents

dc.typeProceedings paper
dspace.entity.typePublication
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