Publication:

Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation

Date

2023
Journal article
https://doi.org/10.1007/s10825-023-02071-3
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dc.contributor.authorGopalan, Sanjay
dc.contributor.authorMansoori, Shoaib
dc.contributor.authorVan de Put, Maarten
dc.contributor.authorGaddemane, Gautam
dc.contributor.authorFischetti, Massimo
dc.contributor.imecauthorVan de Put, Maarten
dc.contributor.imecauthorGaddemane, Gautam
dc.contributor.orcidimecVan de Put, Maarten::0000-0001-9179-6443
dc.contributor.orcidimecGaddemane, Gautam::0000-0003-0067-8674
dc.date.accessioned2024-02-27T08:43:35Z
dc.date.available2023-08-05T17:01:16Z
dc.date.available2023-12-14T14:46:02Z
dc.date.available2024-02-27T08:43:35Z
dc.date.embargo9999-12-31
dc.date.issued2023
dc.description.wosFundingTextFunding for this research has been provided by the Semicon-ductor Research Corporation (SRC) nCORE/NEWLIMITS program and in part by the Taiwan Semiconductor Manufacturing Company Ltd. (TSMC).
dc.identifier.doi10.1007/s10825-023-02071-3
dc.identifier.issn1569-8025
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42276
dc.publisherSPRINGER
dc.source.beginpage1240
dc.source.endpage1256
dc.source.issue5
dc.source.journalJOURNAL OF COMPUTATIONAL ELECTRONICS
dc.source.numberofpages17
dc.source.volume22
dc.subject.keywordsSEMICONDUCTOR
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsSILICENE
dc.subject.keywordsGRAPHENE
dc.title

Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation

dc.typeJournal article
dspace.entity.typePublication
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