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Electrical modeling and characterization of through silicon via for three-dimensional ICs

Date

2010
Journal article
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dc.contributor.authorKatti, Guruprasad
dc.contributor.authorStucchi, Michele
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDehaene, Wim
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDehaene, Wim
dc.date.accessioned2021-10-18T17:33:21Z
dc.date.available2021-10-18T17:33:21Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17354
dc.source.beginpage256
dc.source.endpage262
dc.source.issue1
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume57
dc.title

Electrical modeling and characterization of through silicon via for three-dimensional ICs

dc.typeJournal article
dspace.entity.typePublication
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