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Growth and in situ monitoring of GaN using IR interference effects

Date

1998
Journal article
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dc.contributor.authorConsidine, L.
dc.contributor.authorThrush, E. J.
dc.contributor.authorCrawley, J. A.
dc.contributor.authorJacobs, Koen
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorPark, G. H.
dc.contributor.authorHwang, S. J.
dc.contributor.authorSong, J. J.
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.accessioned2021-09-30T11:36:23Z
dc.date.available2021-09-30T11:36:23Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2461
dc.source.beginpage192
dc.source.endpage198
dc.source.issue1_4
dc.source.journalJournal of Crystal Growth
dc.source.volume195
dc.title

Growth and in situ monitoring of GaN using IR interference effects

dc.typeJournal article
dspace.entity.typePublication
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