Publication:
Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates
Date
| dc.contributor.author | Van Hove, Marleen | |
| dc.contributor.author | Posthuma, Niels | |
| dc.contributor.author | Geens, Karen | |
| dc.contributor.author | Wellekens, Dirk | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.imecauthor | Posthuma, Niels | |
| dc.contributor.imecauthor | Geens, Karen | |
| dc.contributor.imecauthor | Wellekens, Dirk | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
| dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.date.accessioned | 2021-10-24T16:21:47Z | |
| dc.date.available | 2021-10-24T16:21:47Z | |
| dc.date.issued | 2017-09 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/29705 | |
| dc.identifier.url | https://confit.atlas.jp/guide/event/ssdm2017/top?lang=en | |
| dc.source.beginpage | 647 | |
| dc.source.conference | International Conference on Solid State Devices and Materials - SSDM | |
| dc.source.conferencedate | 19/09/2017 | |
| dc.source.conferencelocation | Sendai Japan | |
| dc.source.endpage | 648 | |
| dc.title | Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
| Publication available in collections: |