Publication:

High performance AlGaAs/InGaAs pseudomorphic HEMTs after epitaxial lift-off

Date

1995
Proceedings Paper
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dc.contributor.authorBaeyens, Yves
dc.contributor.authorBrys, Catherine
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorDemeester, Piet
dc.contributor.authorVan Rossum, Marc
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorDemeester, Piet
dc.date.accessioned2021-09-29T13:04:11Z
dc.date.available2021-09-29T13:04:11Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/510
dc.source.beginpage689
dc.source.conferenceCompound Semiconductors 1994. Proceedings of the 21st International Symposium
dc.source.conferencedate18/09/1994
dc.source.conferencelocationSan Diego, CA USA
dc.source.endpage692
dc.title

High performance AlGaAs/InGaAs pseudomorphic HEMTs after epitaxial lift-off

dc.typeProceedings paper
dspace.entity.typePublication
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