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Irradiation induced lattice defects in Si1-xGex epitaxial devices

Date

1995
Proceedings Paper
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dc.contributor.authorOhyama, Hidenori
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorKudo, T.
dc.contributor.authorHakata, T.
dc.contributor.authorKobayashi, K.
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-09-29T13:13:00Z
dc.date.available2021-09-29T13:13:00Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/795
dc.source.beginpage371
dc.source.conferenceICDS-18. Proceedings 18th International Conference on Defects in Semiconductors
dc.source.conferencedate23/07/1995
dc.source.conferencelocationSendai Japan
dc.source.endpage376
dc.title

Irradiation induced lattice defects in Si1-xGex epitaxial devices

dc.typeProceedings paper
dspace.entity.typePublication
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